MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate?Source Breakdown Voltage
(IG
=
?1.0 Adc, VDS
= 0)
V(BR)GSS
?25
?
?
Vdc
Gate Reverse Current (VGS
=
?15 Vdc)
Gate Reverse Current (VGS
=
?15 Vdc, TA
= 125
°C)
IGSS
?
?
?
?
?1.0
?1.0
nAdc
Adc
Gate Source Cutoff Voltage MMBFJ309
(VDS
= 10 Vdc, I
D
= 1.0 nAdc) MMBFJ310, SMMBFJ310
VGS(off)
?1.0
?2.0
?
?
?4.0
?6.5
Vdc
ON CHARACTERISTICS
Zero?Gate?Voltage Drain Current MMBFJ309
(VDS
= 10 Vdc, V
GS
= 0) MMBFJ310, SMMBFJ310
IDSS
12
24
?
?
30
60
mAdc
Gate?Source Forward Voltage
(IG
= 1.0 mAdc, V
DS
= 0)
VGS(f)
?
?
1.0
Vdc
SMALL?SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
|Yfs|
8.0
?
18
mmhos
Output Admittance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
|yos|
?
?
250
mhos
Input Capacitance
(VGS
=
?10 Vdc, VDS
= 0 Vdc, f = 1.0 MHz)
Ciss
?
?
5.0
pF
Reverse Transfer Capacitance
(VGS
=
?10 Vdc, VDS
= 0 Vdc, f = 1.0 MHz)
Crss
?
?
2.5
pF
Equivalent Short?Circuit Input Noise Voltage
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 Hz)
en
?
10
?
nVHz
相关PDF资料
MMBFJ310 IC SWITCH RF N-CH 25V 10MA SOT23
MMBV3401LT1 DIODE TUNING SS 35V SOT23
MMBV3700LT1G DIODE TUNING SS 200V SOT23
MMDL101T1 DIODE SCHOTTKY 7V 200MW SOD-323
MMDL301T1 DIODE SCHOTTKY 200MW 30V SOD-323
MMVL3401T1 DIODE PIN SWITCHING 35V SOD-323
MMVL3700T1G DIODE PIN SWITCHING 200V SOD-323
MOP-AL202C-BYFY-25E-3IN DISPLAY LCD 20X2 Y/G
相关代理商/技术参数
MMBFJ309LT1G 制造商:ON Semiconductor 功能描述:RF JFET
MMBFJ309LT1G_09 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET - VHF/UHF Amplifier Transistor
MMBFJ310 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS(最大值/最小值): 电阻汲极/源极 RDS(导通): 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流(Vgs=0 时的 Idss):25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
MMBFJ310_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel RF Amplifier
MMBFJ310_Q 功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS(最大值/最小值): 电阻汲极/源极 RDS(导通): 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流(Vgs=0 时的 Idss):25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
MMBFJ310L 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET - VHF/UHF Amplifier Transistor
MMBFJ310LT1 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
MMBFJ310LT1G 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel